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GT40QR21(STA1,E,D
Manufacturer No: GT40QR21(STA1,E,D
Manufacturer: Toshiba Electronic Devices and Storage Corporation
SUVSysrem No: GT40QR21(STA1,E,D
Package: Tube
Datasheet: GT40QR21(STA1,E,D
Description: IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
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GT40QR21(STA1,E,D information
Product Attributes Attribute Value
Category Discrete Semiconductor Products
Manufacturer Toshiba Electronic Devices and Storage Corporation
Package Tube
Description IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)600 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 40A
Supplier Device PackageTO-3P(N)
Switching Energy-, 290µJ (off)
Test Condition280V, 40A, 10Ohm, 20V
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)80 A
Power - Max230 W
Package

  • Step1:
    Product

  • Step2:
    Casing drivepipe

  • Step3:
    Anti-static bag

  • Step4:
    Packging boxes

  • Step5:
    bar-code shipping tag
Returning/Warranty
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