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GT30J65MRB,S1E

Manufacturer No: GT30J65MRB,S1E
Manufacturer: Toshiba Electronic Devices and Storage Corporation
SUVSysrem No: GT30J65MRB,S1E
Package: Tube
Datasheet: GT30J65MRB,S1E
Description: IGBT 650 V 60 A 200 W Through Hole TO-3P(N)
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  • ESD

    ESD

  • ISO9001

    ISO9001

  • ISO13485

    ISO13485

  • ISO14001

    ISO14001

  • ISO45001

    ISO45001

GT30J65MRB,S1E information
Product Attributes Attribute Value
Category Discrete Semiconductor Products
Manufacturer Toshiba Electronic Devices and Storage Corporation
Package Tube
Description IGBT 650 V 60 A 200 W Through Hole TO-3P(N)
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)200 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Supplier Device PackageTO-3P(N)
Td (on/off) @ 25°C75ns/400ns
Switching Energy1.4mJ (on), 220µJ (off)
Test Condition400V, 15A, 56Ohm, 15V
Gate Charge70 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max200 W
Package

  • Step1:
    Product

  • Step2:
    Casing drivepipe

  • Step3:
    Anti-static bag

  • Step4:
    Packging boxes

  • Step5:
    bar-code shipping tag
Returning/Warranty
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