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NVH4L040N120M3S

Manufacturer No: NVH4L040N120M3S
Manufacturer: Sanyo Semiconductor/onsemi
SUVSysrem No: NVH4L040N120M3S
Package: Tube
Datasheet: NVH4L040N120M3S
Description: N-Channel 1200 V 54A (Tc) 231W (Tc) Through Hole TO-247-4L
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NVH4L040N120M3S information
Product Attributes Attribute Value
Category Discrete Semiconductor Products
Manufacturer Sanyo Semiconductor/onsemi
Package Tube
Description N-Channel 1200 V 54A (Tc) 231W (Tc) Through Hole TO-247-4L
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs54mOhm @ 20A, 18V
Power Dissipation (Max)231W (Tc)
Vgs(th) (Max) @ Id4.4V @ 10mA
Supplier Device PackageTO-247-4L
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+18V, -3V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 800 V
QualificationAEC-Q101
Package

  • Step1:
    Product

  • Step2:
    Casing drivepipe

  • Step3:
    Anti-static bag

  • Step4:
    Packging boxes

  • Step5:
    bar-code shipping tag
Returning/Warranty
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